BBO is used in various NLO applications such as OPO, OPA, OPCPA. BBO is broadly used because of its wide transparency and phase matching ranges, large non-linear coefficient, perfect optical homogeneity and high damage threshold. Large range of thermal acceptance, high damage threshold and small absorption coefficient makes BBO a good solution for frequency conversion in high average power laser systems.

  •    Optola offers Dual Band AR-coating (DBAR) of BBO for SHG of 1064nm;

             -low reflectance (R<0.2% at 1064nm and R<0.45% at 532nm );

             -high damage threshold (> 300MW/cm2);

             -long durability.

  • Broad Band AR-coating (BBAR) of BBO for SHG of tunable lasers.
  • Broad Band P-coating of BBO for OPO applications.
  • Other coatings are available upon request.
  • Wide dimension range is available:

Dimension tolerance: ±0.1mm
Clear aperture: central 90% of the diameter
Flatness: less than λ/8 @ 633nm
Transmitting wavefront distortion: less than λ/8 @ 633nm
      •   Chamfer:≤0.2mm x 45°
      •   Chip: ≤0.1mm
      •   Surface quality ( Scratch/Dig ): 10/ 5
      •   Parallelism: ≤20 arc seconds
      •   Perpendicularity: ≤5 arc minutes
      •   Angle tolerance: ≤0.25
      •   Damage threshold[GW/cm2]: >1  for 1064nm, TEM00, 10ns, 10Hz (polished only) 
                                                            >0.5 for 1064nm, TEM00, 10ns, 10Hz (AR-coated)
                                                            >0.3 for 532nm,  TEM00, 10ns, 10Hz (AR-coated)

Transparency Range


SHG Phase Matchable Range

409.6-3500nm  (Type I)      525-3500nm (Type II)

Thermal-optic Coefficients (/℃)

dno/dT=-16.6x 10-6/℃
dne/dT=-9.3x 10-6/℃

Absorption Coefficients

<0.1%/cm(at 1064nm)  <1%/cm(at 532nm)

Angle Acceptance

0.8mrad·cm  (θ, Type I, 1064 SHG)
1.27mrad·cm  (θ, Type II, 1064 SHG)

Temperature Acceptance


Spectral Acceptance


Walk-off Angle

2.7° (Type I  1064 SHG)
3.2° (Type II  1064 SHG)

NLO Coefficients

deff(I)=d31sinθ+(d11cos3Φ- d22 sin3Φ) cosθ                   
deff (II)= (d11 sin3Φ + d22 cos3Φ) cos2θ

Non-vanished NLO susceptibilities

d11 = 5.8 x d36(KDP)
d31 = 0.05 x d11
d22 < 0.05 x d11

Sellmeier  Equations
(λ in μm) 


Electro-optic coefficients

γ22 = 2.7 pm/V

Half-wave voltage

7 KV (at 1064 nm,3x3x20mm3)


>1011 ohm·cm

Relative Dielectric Constant

εs11 / εo : 6.7
εs33 / εo : 8.1

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